Large Capacity Nand Flash Memory for Harsh Enviornment Downhole Tools
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Large Capacity Nand Flash Memory for Harsh Enviornment Downhole Tools

USB Flash Disk Model: LDMF1GA/4GA Customizable Made in China

USB Flash Disk made of ceramic — Color Gold, Shape Carton. MOQ 1 piece, US$630.00 – 650.00/piece. Verified factory; QC & shipping by GoodsFromChina.

US$650.001 – 9 pieces
US$630.0010+ pieces
Min. order: 1 piece
Material
Ceramic
Color
Gold
Shape
Carton
Function
Storage USB Disk
Storage Capacity
2-4G
Interface Type
Pin
Storage Capacity:
Material:
Color:
Working Voltage:
Operating Voltage Range(Vcc):
Page size x8:
pieces
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At a glance

Product
Large Capacity Nand Flash Memory for Harsh Enviornment Downhole Tools
Price
US$630.00 – 650.00 / piece
Minimum order
1 piece
Origin
China.
Customization
Available
Packaging
Box
HS code
8523511000

Last updated

Specifications

CustomizationAvailable
Storage Capacity2-4G
Interface TypePin
Model NO.LDMF1GA/4GA
ShapeCarton
MaterialCeramic
Open StyleOpening
USB TypeCreative USB Disk
ColorGold
FunctionStorage USB Disk
Security CheckSupport Security Check
Operating Temperature-45~+210 Degree
Max Working Current90mA
Lifetime>2000h
Read Speed2.78ms/Page
Write Speed2.15ms/Page
Working Voltage2.7~3.6V
Transport PackageBox
Specification15.5 x 21.6 /2.54 mm
OriginChina.
HS Code8523511000
Production Capacity20000
The highest operating current90mA
Standby current<2ma
Operating Voltage Range(Vcc)2.7 V ~ 3.6 V
Input High level (V)0.8Vcc ~ Vcc+0.3
Input Low level (V)-0.3 ~ 0.2Vcc
Output High level (V)2.4 ~ Vcc
Output Low level (V)-0.3 ~ 0.4
High temperature data hold time≥500h
Operating life≥2000h
Read/write Rate2.8 ms/page read 2.15ms/page write
Package16 PIN DIP PB-Free Package
Pin DescriptionPIN
LDMF1GAAddressing
Notes1. CAx = column address, PAx = page address, BAx = block address ,the page address, block address called the row address. Byte address of page called column address
Page size x88640 bytes (2048 + 64 bytes)
Block size128 pages (1024K + 8K bytes)
Block number4096 blocks
LDMF4GAAddressing
Instruction ListFunction
Operating Steps1. An error occurred on page n of block A during erasing or programming operation.Copy the data from the first page to the (n-1) -th page of block A to the same position in the other empty block B.Copy the buffer data need to be saved to the n-th page position of block B.Add block A to the Bad block table.
Read operationRead operation is implemented by writing 00h-30h command to the command register. First, write 00h command, then, write the address with 5 cycles, last, write 30h command. After completion, the R/B(-) is released. the user determine the completion of the internal data transmission by detecting the status of R/B(-). Once the completion of the transmission, the user can start the RE, the data read out continuously.
Programming operationBefore programming operation, user must erase the block firstly. Programming operation is implemented by writing 80h-10h command to the command register. First write 80h command, then, write the address with 5 cycles, and then load the data into the internal data buffer register, last, write 10h after the completion of the command to confirm Write. After programming completion, the R/B(-) is released.
Erase operationThe erase operation command is 60h-D0h. First write 60h command, then write the address with 3 cycles , and then write D0h command to confirm the erase. After the completion of erasing, R/B(-) is released.
Sequential instructions(-45ºC~175ºC)As the temperature increases, the response speed of the device after operation can slow down.User program execution sequence a certain amount of allowance, suggest to increase the high temperature stability.
Timing parameter list(25ºC)Symbol
PINFunctional description
IO0 ~ IO7Multiplexed input / output The bidirectional I/Os transfer address, data, and command information. When C(-)E(-) pin is high,the I/Os is High impedance.
CLECommand Latch Enable When CLE is high, the command is latched into the command register through the IO port on the rising edge of the signal.
ALEAddress Latch Enable When ALE is high,the address is latched into the address register through the IO port on the rising edge of the signal.
C(-)E(-)Chip Enable Enables or disables the chip.
R(-)E(-)Read Enable Control the output of serial data. When the signal is low, the data is driven to the IO port. Data is valid after tREA time on the falling edge of R(-)E(-), and the internal column address counter is incremented automatically.
W(-)E(-)Write Enable Control the input of serial data,command, address and data is latched on the W(-)E(-) Rising edge.
R/B(-)Ready/Busy output Indicates the device operating state. When low, indicates that programming, erase, or random read operation is in progress, when high, indicates that no operation or operation is finished. It is recommended to connect a pull-up resistor (4.7K~10K) to the pin.
VccPower Supply
VssGND
AddressingIO 0IO 1IO 2IO 3IO 4IO 5IO 6IO 7
1st cycleCA0CA1CA2CA3CA4CA5CA6CA7Column Address 1
2nd cycleCA8CA9CA10CA110000Column address 2
3rd cyclePA0PA1PA2PA3PA4PA5PA6BA7Row address 1
4th cycleBA8BA9BA10BA11BA12BA13BA14BA15Row address 2
5th cycleBA16BA17BA1800000Row address 3
AddressingIO 0IO 1IO 2IO 3IO 4IO 5IO 6IO 7
1st cycleCA0CA1CA2CA3CA4CA5CA6CA7Column Address 1
2nd cycleCA8CA9CA10CA11CA12CA1300Column address 2
3rd cyclePA0PA1PA2PA3PA4PA5PA6BA7Row address 1
4th cycleBA8BA9BA10BA11BA12BA13BA14BA15Row address 2
5th cycleBA16BA17BA1800000Row address 3
Function1st cycle2nd cycle
ResetFFh-
Read00h30h
Page program80h10h
Block erase60hD0h
SymbolMINStandardMAXUnitsDscription
tPROG0.83msPage program time
tBERS1.510msBlock erasure time
tCLS15ns
tCLH5ns
tCS20ns
tCH5ns
tWP15ns
tALS15ns
tALH5ns
tDS15ns
tDH5ns
tWC30ns
tWH10ns
tADL70ns
tR60μs
tAR10ns
tCLR10ns
tRR20ns
tRP15ns
tWB100ns
tRC30ns
tREA20ns
tCEA25ns
tRHZ100ns
tCHZ30ns
tCSD10ns
tRHOH15ns
tRLOH5ns
tCOH15ns
tREH10ns
tIR0ns
tRHW100ns
tWHR60ns
tRST5/10/500μsRead/programming/erasing

Product details

Large Capacity Nand Flash Memory for Harsh Enviornment Downhole Tools is a usb flash disk product manufactured in China and available to buyers worldwide through the GoodsFromChina sourcing service.

Key features

  • Material: Ceramic
  • Color: Gold
  • Shape: Carton
  • Function: Storage USB Disk
  • Storage Capacity: 2-4G
  • Interface Type: Pin
  • Open Style: Opening
  • USB Type: Creative USB Disk

Notes

1. CAx = column address, PAx = page address, BAx = block address ,the page address, block address called the row address. Byte address of page called column address

Operating Steps

1. An error occurred on page n of block A during erasing or programming operation.Copy the data from the first page to the (n-1) -th page of block A to the same position in the other empty block B.Copy the buffer data need to be saved to the n-th page position of block B.Add block A to the Bad block table.

Read operation

Read operation is implemented by writing 00h-30h command to the command register. First, write 00h command, then, write the address with 5 cycles, last, write 30h command. After completion, the R/B(-) is released. the user determine the completion of the internal data transmission by detecting the status of R/B(-). Once the completion of the transmission, the user can start the RE, the data read out continuously.

Programming operation

Before programming operation, user must erase the block firstly. Programming operation is implemented by writing 80h-10h command to the command register. First write 80h command, then, write the address with 5 cycles, and then load the data into the internal data buffer register, last, write 10h after the completion of the command to confirm Write. After programming completion, the R/B(-) is released.

Ordering & packaging

Minimum order quantity is 1 piece. Standard export packaging: Box. HS code: 8523511000. Every order can include a pre-shipment quality inspection and consolidated shipping by sea, air or express, including DDP delivery.

How we source this product for you

  1. 1

    Send your inquiry

    Choose options, quantity and requirements. No payment needed.

  2. 2

    Get a factory quote

    We confirm price, MOQ and lead time — and compare alternatives.

  3. 3

    Production & inspection

    We follow up production and inspect goods before shipment.

  4. 4

    Delivered to your door

    Sea, air or express with customs clearance and DDP options.

Express5–8 days
Air freight8–12 days
Sea freight25–40 days
DDPDuties included

Frequently asked questions

What is the minimum order quantity for Large Capacity Nand Flash Memory for Harsh Enviornment?

The MOQ is 1 piece. Smaller trial orders can sometimes be negotiated — tell us your quantity in the inquiry.

How much does Large Capacity Nand Flash Memory for Harsh Enviornment cost?

The listed factory price is US$630.00 – 650.00 per piece, depending on quantity (larger orders get lower tier prices). Your final quote includes our service fee and shipping options.

Can it be customized with my logo or specifications?

Yes. The manufacturer offers customization — logo printing, packaging, colors or modified specifications. Describe your requirements in the inquiry form.

How long does production and shipping take?

Typical production time is 15–45 days depending on quantity. Shipping to the US takes about 5–8 days by express, 8–12 days by air and 25–40 days by sea, with DDP door-to-door delivery available.

How do you check product quality?

We verify the manufacturer before ordering and can perform a pre-shipment inspection (AQL sampling) with a photo report before you pay the balance.

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